Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy
Identifieur interne : 000F11 ( Main/Repository ); précédent : 000F10; suivant : 000F12Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy
Auteurs : RBID : Pascal:13-0348215Descripteurs français
- Pascal (Inist)
- Bande interdite, Caractéristique optique, Propriété optique, Méthode MOVPE, Etude comparative, Autoassemblage, Microscopie force atomique, Photoluminescence, Epaisseur couche, Rétrécissement, Basse température, Température ambiante, Mesure température, Effet quantique, Confinement quantique, Phosphure de gallium, Phosphure d'indium, Composé ternaire, Composé binaire, Point quantique, Couche ultramince, Couche mince, Couche autoassemblée, Fabrication microélectronique, 7867, 8107T, 8535B, 8116D, InGaP, InP, 6837P, 8540H.
English descriptors
- KwdEn :
- Ambient temperature, Atomic force microscopy, Binary compounds, Comparative study, Energy gap, Gallium phosphide, Indium phosphide, Layer thickness, Low temperature, MOVPE method, Microelectronic fabrication, Narrowing, Optical characteristic, Optical properties, Photoluminescence, Quantum confinement, Quantum dots, Quantum effect, Self-assembled layers, Self-assembly, Temperature measurement, Ternary compounds, Thin films, Ultrathin films.
Abstract
A comparison of ultra-thin insertion layers (GaP and GaP/In0.4Ga0.6P) on InP self-assembled quantum dots (SAQDs) grown on GaAs (001) substrates using metal-organic vapor phase epitaxy (MOVPE) was studied. Atomic force microscopy (AFM) and photoluminescence (PL) were employed to characterize the optical and structural properties of the grown InP QDs. It is found that the QD dimension, size distribution and density strongly depend on the insertion layer thickness which led to tune the emission wavelength and narrowing of full width at half maximum (FWHM) at low temperature (20-250 K) and at room-temperature PL measurements. This result is attributed to the improved QD size and quantum confinement effect arising from the insertion of the GaP and GaP/In0.4Ga0.6P layers.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy</title><author><name sortKey="Han, S S" uniqKey="Han S">S. S. Han</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (NanoTec Center of Excellent), Department of Electrical Engineering, Chulalongkorn University</s1><s2>Bangkok 10330</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10330</wicri:noRegion></affiliation></author><author><name sortKey="Higo, A" uniqKey="Higo A">A. Higo</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Research Center for Advanced Science and Technology, The University of Tokyo</s1><s3>JPN</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Research Center for Advanced Science and Technology, The University of Tokyo</wicri:noRegion></affiliation></author><author><name sortKey="Yunpeng, W" uniqKey="Yunpeng W">W. Yunpeng</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo</s1><s3>JPN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo</wicri:noRegion></affiliation></author><author><name sortKey="Deura, M" uniqKey="Deura M">M. Deura</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo</s1><s3>JPN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo</wicri:noRegion></affiliation></author><author><name sortKey="Sugiyama, M" uniqKey="Sugiyama M">M. Sugiyama</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo</s1><s3>JPN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo</wicri:noRegion></affiliation></author><author><name sortKey="Nakano, Y" uniqKey="Nakano Y">Y. Nakano</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo</s1><s3>JPN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Research Center for Advanced Science and Technology, The University of Tokyo</s1><s3>JPN</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Research Center for Advanced Science and Technology, The University of Tokyo</wicri:noRegion></affiliation></author><author><name sortKey="Panyakeow, S" uniqKey="Panyakeow S">S. Panyakeow</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (NanoTec Center of Excellent), Department of Electrical Engineering, Chulalongkorn University</s1><s2>Bangkok 10330</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10330</wicri:noRegion></affiliation></author><author><name sortKey="Ratanathammaphan, S" uniqKey="Ratanathammaphan S">S. Ratanathammaphan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (NanoTec Center of Excellent), Department of Electrical Engineering, Chulalongkorn University</s1><s2>Bangkok 10330</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10330</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0348215</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0348215 INIST</idno><idno type="RBID">Pascal:13-0348215</idno><idno type="wicri:Area/Main/Corpus">000555</idno><idno type="wicri:Area/Main/Repository">000F11</idno></publicationStmt><seriesStmt><idno type="ISSN">0167-9317</idno><title level="j" type="abbreviated">Microelectron. eng.</title><title level="j" type="main">Microelectronic engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term><term>Atomic force microscopy</term><term>Binary compounds</term><term>Comparative study</term><term>Energy gap</term><term>Gallium phosphide</term><term>Indium phosphide</term><term>Layer thickness</term><term>Low temperature</term><term>MOVPE method</term><term>Microelectronic fabrication</term><term>Narrowing</term><term>Optical characteristic</term><term>Optical properties</term><term>Photoluminescence</term><term>Quantum confinement</term><term>Quantum dots</term><term>Quantum effect</term><term>Self-assembled layers</term><term>Self-assembly</term><term>Temperature measurement</term><term>Ternary compounds</term><term>Thin films</term><term>Ultrathin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Bande interdite</term><term>Caractéristique optique</term><term>Propriété optique</term><term>Méthode MOVPE</term><term>Etude comparative</term><term>Autoassemblage</term><term>Microscopie force atomique</term><term>Photoluminescence</term><term>Epaisseur couche</term><term>Rétrécissement</term><term>Basse température</term><term>Température ambiante</term><term>Mesure température</term><term>Effet quantique</term><term>Confinement quantique</term><term>Phosphure de gallium</term><term>Phosphure d'indium</term><term>Composé ternaire</term><term>Composé binaire</term><term>Point quantique</term><term>Couche ultramince</term><term>Couche mince</term><term>Couche autoassemblée</term><term>Fabrication microélectronique</term><term>7867</term><term>8107T</term><term>8535B</term><term>8116D</term><term>InGaP</term><term>InP</term><term>6837P</term><term>8540H</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A comparison of ultra-thin insertion layers (GaP and GaP/In<sub>0.4</sub>Ga<sub>0.6</sub>P) on InP self-assembled quantum dots (SAQDs) grown on GaAs (001) substrates using metal-organic vapor phase epitaxy (MOVPE) was studied. Atomic force microscopy (AFM) and photoluminescence (PL) were employed to characterize the optical and structural properties of the grown InP QDs. It is found that the QD dimension, size distribution and density strongly depend on the insertion layer thickness which led to tune the emission wavelength and narrowing of full width at half maximum (FWHM) at low temperature (20-250 K) and at room-temperature PL measurements. This result is attributed to the improved QD size and quantum confinement effect arising from the insertion of the GaP and GaP/In<sub>0.4</sub>Ga<sub>0.6</sub>P layers.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0167-9317</s0></fA01><fA02 i1="01"><s0>MIENEF</s0></fA02><fA03 i2="1"><s0>Microelectron. eng.</s0></fA03><fA05><s2>112</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>HAN (S. S.)</s1></fA11><fA11 i1="02" i2="1"><s1>HIGO (A.)</s1></fA11><fA11 i1="03" i2="1"><s1>YUNPENG (W.)</s1></fA11><fA11 i1="04" i2="1"><s1>DEURA (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>SUGIYAMA (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>NAKANO (Y.)</s1></fA11><fA11 i1="07" i2="1"><s1>PANYAKEOW (S.)</s1></fA11><fA11 i1="08" i2="1"><s1>RATANATHAMMAPHAN (S.)</s1></fA11><fA14 i1="01"><s1>Semiconductor Device Research Laboratory (NanoTec Center of Excellent), Department of Electrical Engineering, Chulalongkorn University</s1><s2>Bangkok 10330</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo</s1><s3>JPN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Research Center for Advanced Science and Technology, The University of Tokyo</s1><s3>JPN</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>143-148</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>20003</s2><s5>354000504215450280</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>23 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0348215</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Microelectronic engineering</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>A comparison of ultra-thin insertion layers (GaP and GaP/In<sub>0.4</sub>Ga<sub>0.6</sub>P) on InP self-assembled quantum dots (SAQDs) grown on GaAs (001) substrates using metal-organic vapor phase epitaxy (MOVPE) was studied. Atomic force microscopy (AFM) and photoluminescence (PL) were employed to characterize the optical and structural properties of the grown InP QDs. It is found that the QD dimension, size distribution and density strongly depend on the insertion layer thickness which led to tune the emission wavelength and narrowing of full width at half maximum (FWHM) at low temperature (20-250 K) and at room-temperature PL measurements. This result is attributed to the improved QD size and quantum confinement effect arising from the insertion of the GaP and GaP/In<sub>0.4</sub>Ga<sub>0.6</sub>P layers.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H55</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07T</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A16D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Bande interdite</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Energy gap</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Caractéristique optique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Optical characteristic</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Característica óptica</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Propriété optique</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Optical properties</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>MOVPE 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l="FRE"><s0>Rétrécissement</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Narrowing</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Estrechamiento</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Basse température</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Low temperature</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Baja temperatura</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Température ambiante</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Ambient temperature</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Mesure température</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Temperature measurement</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Effet quantique</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Quantum effect</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Efecto cuántico</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Confinement quantique</s0><s5>15</s5></fC03><fC03 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dots</s0><s5>26</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Couche ultramince</s0><s5>27</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Ultrathin films</s0><s5>27</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Couche mince</s0><s5>28</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Thin films</s0><s5>28</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Couche autoassemblée</s0><s5>29</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Self-assembled layers</s0><s5>29</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Fabrication microélectronique</s0><s5>46</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Microelectronic fabrication</s0><s5>46</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0><s5>46</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>7867</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>8107T</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8535B</s0><s4>INC</s4><s5>58</s5></fC03><fC03 i1="28" i2="3" 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